Transcend TS128MSQ64V6J 240PIN SO-DIMM DDR2-667 Unbuffered 1GB Non-ECC Memory Module With 64Mx8 CL5, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ 667Mb/s/Pin., Posted CAS, Programmable CAS Latency (3,4,5), Programmable Additive Latency 0, 1, 2, 3 and 4; UPC 760557798293 (TS-128MSQ64V6J TS 128MSQ64V6J TS128M-SQ64V6J TS128M SQ64V6J)

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Computer Products > Memory RAM > Transcend TS128MSQ64V6J 240PIN SO-DIMM DDR2-667 Unbuffered 1GB Non-ECC Memory Module With 64Mx8 CL5, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ 667Mb/s/Pin., Posted CAS, Programmable CAS Latency (3,4,5), Programmable Additive Latency 0, 1, 2, 3 and 4; UPC 760557798293 (TS-128MSQ64V6J TS 128MSQ64V6J TS128M-SQ64V6J TS128M SQ64V6J)

Transcend TS128MSQ64V6J 240PIN SO-DIMM DDR2-667 Unbuffered 1GB Non-ECC Memory Module With 64Mx8 CL5, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ 667Mb/s/Pin., Posted CAS, Programmable CAS Latency (3,4,5), Programmable Additive Latency 0, 1, 2, 3 and 4; UPC 760557798293 (TS-128MSQ64V6J TS 128MSQ64V6J TS128M-SQ64V6J TS128M SQ64V6J)

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Transcend TS128MSQ64V6J 240PIN SO-DIMM DDR2-667 Unbuffered 1GB Non-ECC Memory Module With 64Mx8 CL5, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ 667Mb/s/Pin., Posted CAS, Programmable CAS Latency (3,4,5), Programmable Additive Latency 0, 1, 2, 3 and 4; UPC 760557798293, Burst Length:4, 8 (Interleave/nibble sequential); Programmable sequential / Interleave Burst Mode, Bi-directional Differential Data-Strobe, Off-Chip Driver (OCD) Impedance Adjustment, MRS cycle with address key programs, On Die Termination, Serial presence detect with EEPROM, RoHS compliant

General Information
Manufacturer	Transcend
Manufacturer Part Number	TS128MSQ64V6J
Product Name	240PIN SO-DIMM DDR2-667 Unbuffered 1GB Non-ECC Memory Module With 64Mx8 CL5
UPC Code	760557798293
Overview
The TS128MSQ64V6J is a 128M x 64bits DDR2-667 SO-DIMM. The TS128MSQ64V6J consists of 16pcs 64Mx8 bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS128MSQ64V6J is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features
JEDEC standard 1.8V � 0.1V Power supply VDDQ=1.8V � 0.1V Max clock Freq: 333MHZ; 667Mb/s/Pin. Posted CAS Programmable CAS Latency: 3,4,5 Programmable Additive Latency :0, 1,2,3 and 4 Write Latency (WL) = Read Latency (RL)-1 Burst Length: 4,8(Interleave/nibble sequential) Programmable sequential / Interleave Burst Mode Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature) Off-Chip Driver (OCD) Impedance Adjustment MRS cycle with address key programs. On Die Termination Serial presence detect with EEPROM RoHS compliant

A-20121121-1052-130-L

*This item is BRAND NEW - not refurbished. It comes with all manufacturer supplied accessories, and full manufacturer's USA warranty.

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