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Computer Products > Memory RAM > Transcend TS512MSK64V3N DDR 204Pin 4GB DDR3 1333 SO-DIMM Unbuffer Non-ECC Memory Module, JEDEC standard 1.5V +/- 0.075V Power supply, VDDQ=1.5V +/- 0.075V, Clock Freq 667MHZ for 1333Mb/s/Pin, Programmable CAS Latency (6, 7, 8, 9), Programmable Additive Latency (Posted /CAS) 0, CL-2 or CL-1 clock; UPC 760557816577 (TS-512MSK64V3N TS 512MSK64V3N TS512M-SK64V3N)
Transcend TS512MSK64V3N DDR 204Pin 4GB DDR3 1333 SO-DIMM Unbuffer Non-ECC Memory Module, JEDEC standard 1.5V +/- 0.075V Power supply, VDDQ=1.5V +/- 0.075V, Clock Freq 667MHZ for 1333Mb/s/Pin, Programmable CAS Latency (6, 7, 8, 9), Programmable Additive Latency (Posted /CAS) 0, CL-2 or CL-1 clock; UPC 760557816577 (TS-512MSK64V3N TS 512MSK64V3N TS512M-SK64V3N)
Transcend TS512MSK64V3N DDR 204Pin 4GB DDR3 1333 SO-DIMM Unbuffer Non-ECC Memory Module, JEDEC standard 1.5V +/- 0.075V Power supply, VDDQ=1.5V +/- 0.075V, Clock Freq 667MHZ for 1333Mb/s/Pin, Programmable CAS Latency (6, 7, 8, 9), Programmable Additive Latency (Posted /CAS) 0, CL-2 or CL-1 clock; UPC 760557816577 (TS-512MSK64V3N TS 512MSK64V3N TS512M-SK64V3N)

SKU: TS512MSK64V3N

Brand: Transcend

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Transcend TS512MSK64V3N DDR 204Pin 4GB DDR3 1333 SO-DIMM Unbuffer Non-ECC Memory Module, JEDEC standard 1.5V +/- 0.075V Power supply, VDDQ=1.5V +/- 0.075V, Clock Freq 667MHZ for 1333Mb/s/Pin, Programmable CAS Latency (6, 7, 8, 9), Programmable Additive Latency (Posted /CAS) 0, CL-2 or CL-1 clock; UPC 760557816577, Programmable/CAS Write Latency (CWL) = 7 (DDR3-1333), 8 bit pre-fetch, Bi-directional Differential Data-Strobe, Internal calibration through ZQ pin, On Die Termination with ODT pin, Serial presence detect with EEPROM, Asynchronous reset, RoHS compliant


General Information

Manufacturer

Transcend

Manufacturer Part Number

TS512MSK64V3N

Product Name

DDR 204Pin 4GB DDR3 1333 SO-DIMM Unbuffer Non-ECC Memory Module

UPC Code

760557816577

Overview

The TS512MSK64V3N is a 512M x 64bits DDR3-1333 SO-DIMM. The TS512MSK64V3N consists of 16pcs 256Mx8bits DDR3 SDRAMs FBGA packages and a 2048 bits serial EEPROM on a 204-pin printed circuit board. The TS512MSK64V3N is a Dual In-Line Memory Module and is intended for mounting into 204-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features

  • JEDEC standard 1.5V ± 0.075V Power supply
  • VDDQ=1.5V ± 0.075V
  • Clock Freq: 667MHZ for 1333Mb/s/Pin.
  • Programmable CAS Latency: 6, 7, 8, 9
  • Programmable Additive Latency (Posted /CAS): 0, CL-2 or CL-1 clock
  • Programmable /CAS Write Latency (CWL) = 7 (DDR3-1333)
  • 8 bit pre-fetch
  • Burst Length: 4, 8
  • Bi-directional Differential Data-Strobe
  • Internal calibration through ZQ pin
  • On Die Termination with ODT pin
  • Serial presence detect with EEPROM
  • Asynchronous reset
  • RoHS compliant products.

Specifications

Frequency DDR3-1333
Function Unbuffer Non-ECC Memory
Pin Number 204Pin
Capacity 4GB
DRAM Type 512Mx64

A-20121022-1052-130-L

*This item is BRAND NEW - not refurbished. It comes with all manufacturer supplied accessories, and full manufacturer's USA warranty.

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