Transcend TS64MSQ64V6M DDR2 200Pin SO-DIMM DDR2-667 Unbuffer Non-ECC 512MB Memory Module, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ, Programmable Additive Latency (0, 1, 2, 3 and 4), Write Latency (WL) = Read Latency (RL)-1, Burst Length 4, 8 (Interleave/nibble sequential); UPC 760557798828 (TS-64MSQ64V6M TS 64MSQ64V6M TS64M-SQ64V6M TS64M SQ64V6M)

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Computer Products > Memory RAM > Transcend TS64MSQ64V6M DDR2 200Pin SO-DIMM DDR2-667 Unbuffer Non-ECC 512MB Memory Module, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ, Programmable Additive Latency (0, 1, 2, 3 and 4), Write Latency (WL) = Read Latency (RL)-1, Burst Length 4, 8 (Interleave/nibble sequential); UPC 760557798828 (TS-64MSQ64V6M TS 64MSQ64V6M TS64M-SQ64V6M TS64M SQ64V6M)

Transcend TS64MSQ64V6M DDR2 200Pin SO-DIMM DDR2-667 Unbuffer Non-ECC 512MB Memory Module, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ, Programmable Additive Latency (0, 1, 2, 3 and 4), Write Latency (WL) = Read Latency (RL)-1, Burst Length 4, 8 (Interleave/nibble sequential); UPC 760557798828 (TS-64MSQ64V6M TS 64MSQ64V6M TS64M-SQ64V6M TS64M SQ64V6M)

SKU: TS64MSQ64V6M

Brand: Transcend

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Transcend TS64MSQ64V6M DDR2 200Pin SO-DIMM DDR2-667 Unbuffer Non-ECC 512MB Memory Module, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ, Programmable Additive Latency (0, 1, 2, 3 and 4), Write Latency (WL) = Read Latency (RL)-1, Burst Length 4, 8 (Interleave/nibble sequential); UPC 760557798828, Programmable sequential / Interleave Burst Mode, Off-Chip Driver (OCD) Impedance Adjustment, On Die Termination, Serial presence detect with EEPROM, RoHS compliant

General Information
Manufacturer	Transcend
Manufacturer Part Number	TS64MSQ64V6M
Product Name	DDR2 200Pin SO-DIMM DDR2-667 Unbuffer Non-ECC 512MB Memory Module
UPC Code	760557798828
Overview
The TS64MSQ64V6M is a 32M x 64bits DDR2-667 SO-DIMM. The TS64MSQ64V6M consists of 8pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS64MSQ64V6M is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
Features
JEDEC standard 1.8V � 0.1V Power supply VDDQ=1.8V � 0.1V Max clock Freq 333MHZ Programmable Additive Latency 0, 1, 2, 3 and 4 Write Latency (WL) = Read Latency (RL)-1 Burst Length: 4, 8 (Interleave/nibble sequential) Programmable sequential / Interleave Burst Mode Off-Chip Driver (OCD) Impedance Adjustment On Die Termination Serial presence detect with EEPROM RoHS compliant
Specifications
Module Type	DDR2 SO-DIMM
Frequency	DDR2-667
Function	Unbuffer Non-ECC Memory
Pin Number	200Pin
Capacity	512MB
DRAM Type	32Mx16
Timing Description	5-5-5
Voltage	1.8V
Rank Number	1 Rank/ 2 Ranks
PCB Height	1.18 Inches
Operation Temperature	0~85�C

A-20121212-1052-130-L

*This item is BRAND NEW - not refurbished. It comes with all manufacturer supplied accessories, and full manufacturer's USA warranty.

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