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Computer Products > Memory RAM > Transcend TS64MSQ64V6J DDR2 200Pin SO-DIMM DDR2-667 Unbuffer Non-ECC 512MB Memory Module, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ, Programmable Additive Latency (0, 1, 2, 3 and 4), Write Latency (WL) = Read Latency (RL)-1, Burst Length 4, 8 (Interleave/nibble sequential); UPC 760557798095 (TS-64MSQ64V6J TS 64MSQ64V6J TS64M-SQ64V6J TS64M SQ64V6J)
Transcend TS64MSQ64V6J DDR2 200Pin SO-DIMM DDR2-667 Unbuffer Non-ECC 512MB Memory Module, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ, Programmable Additive Latency (0, 1, 2, 3 and 4), Write Latency (WL) = Read Latency (RL)-1, Burst Length 4, 8 (Interleave/nibble sequential); UPC 760557798095 (TS-64MSQ64V6J TS 64MSQ64V6J TS64M-SQ64V6J TS64M SQ64V6J)
Transcend TS64MSQ64V6J DDR2 200Pin SO-DIMM DDR2-667 Unbuffer Non-ECC 512MB Memory Module, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ, Programmable Additive Latency (0, 1, 2, 3 and 4), Write Latency (WL) = Read Latency (RL)-1, Burst Length 4, 8 (Interleave/nibble sequential); UPC 760557798095 (TS-64MSQ64V6J TS 64MSQ64V6J TS64M-SQ64V6J TS64M SQ64V6J)

SKU: TS64MSQ64V6J

Brand: Transcend

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Transcend TS64MSQ64V6J DDR2 200Pin SO-DIMM DDR2-667 Unbuffer Non-ECC 512MB Memory Module, JEDEC standard 1.8V +/- 0.1V Power supply, VDDQ=1.8V +/- 0.1V, Max clock Freq 333MHZ, Programmable Additive Latency (0, 1, 2, 3 and 4), Write Latency (WL) = Read Latency (RL)-1, Burst Length 4, 8 (Interleave/nibble sequential); UPC 760557798095, Programmable sequential / Interleave Burst Mode, Off-Chip Driver (OCD) Impedance Adjustment, On Die Termination, Serial presence detect with EEPROM, RoHS compliant


General Information

Manufacturer

Transcend

Manufacturer Part Number

TS64MSQ64V6J

Product Name

DDR2 200Pin SO-DIMM DDR2-667 Unbuffer Non-ECC 512MB Memory Module

UPC Code

760557798095

Overview

The TS64MSQ64V6J is a 64M x 64bits DDR2-667 SO-DIMM. The TS64MSQ64V6J consists of 8pcs 64Mx8its DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS64MSQ64V6J is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Features

  • JEDEC standard 1.8V ± 0.1V Power supply
  • VDDQ=1.8V ± 0.1V
  • Max clock Freq 333MHZ
  • Programmable Additive Latency 0, 1, 2, 3 and 4
  • Write Latency (WL) = Read Latency (RL)-1
  • Burst Length: 4, 8 (Interleave/nibble sequential)
  • Programmable sequential / Interleave Burst Mode
  • Off-Chip Driver (OCD) Impedance Adjustment
  • On Die Termination
  • Serial presence detect with EEPROM
  • RoHS compliant

Specifications

Module Type DDR2 SO-DIMM
Frequency DDR2-667
Function Unbuffer Non-ECC Memory
Pin Number 200Pin
Capacity 512MB
DRAM Type 64Mx8
Timing Description 5-5-5
Voltage 1.8V
Rank Number 1 Rank/ 2 Ranks
PCB Height 1.18 Inches
Operation Temperature 0~85șC

A-20130114-1052-130-L

*This item is BRAND NEW - not refurbished. It comes with all manufacturer supplied accessories, and full manufacturer's USA warranty.

*** DISCLAIMERS: 1) Availability is not always guaranteed: Please call or email us to double-check stock before placing your order. We ship from our inventory and also drop-ship from hundreds of suppliers. We try very hard to show only available products but sometimes products sell out before we can update the product webpage.  2) Some information may have been supplied by 3rd Party Content Suppliers: We are not responsible for Data or Image errors.  3) We do not offer Installation, Training or Technical Support on this product.***

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